| Research Title | Investigation of the Terahertz Radiation Mechanism in Gallium-Arsenide on Si Substance | |
| Research Personnel |
Leader: Staff: |
Dr. Elmer Estacio |
| Research Duration |
Start: End: |
17 February 2014 16 February 2015 |
| Research Location | UP Diliman | |
| Research Description | The integration of gallium arsenide (GaAs) and silicon (Si) remains an interest in the semiconductor industry because the superioir optoelectronic properties of GaAs and the mature Si technology will result to lower production cost for high speed electronics and optical communications. In terhertz (THz) research, GaAs and Si have already earned their individual merit. GaAs has found its application as photoconductive antenna and surface emitter. On the other hand, Si which is transparent to THz is commonly used as substrate lens. Due to their individual properties, combining these two materials will therfore present unique material characteristics that we can exploit for THz applications. | |
| Research Objectives | ||
| Research Beneficiary(ies) | This research will directly benefit the CMPL, upgrade our current THz-TDS setup to be azimutha ready, can be used later on as a reference for the use of GaAs on Si for THz applications. | |
| Research Accoplishments | ||
| Total Research Cost | ||
| Research Agencies |
Funding: Implementing: Cooperating: Monitoring: |
UP Diliman |
| Research Budget Breakdown |
Year: Year Funded: PS: MOOE: EO: Total Cost Date Released Amount Released |
2014 ₱597,696 |
| Code | TS-2014-21 | |
| KRA Code | Rapid and Sustained Economic Growth | |
| Priority Thrust |
DOST R&D |
|
| Sector | Applied Sciences | |
| Actual Sector | Materials Science | |
| Related sectors | Physics | |
| Entry revision: | January 2021 | |
