Applied Sciences > Engineering > TS-2014-21

Research Title Investigation of the Terahertz Radiation Mechanism in Gallium-Arsenide on Si Substance
Research Personnel Leader:
Dr. Elmer Estacio

Research Duration Start:
17 February 2014
16 February 2015
Research Location UP Diliman
Research Description The integration of gallium arsenide (GaAs) and silicon (Si) remains an interest in the semiconductor industry because the superioir optoelectronic properties of GaAs and the mature Si technology will result to lower production cost for high speed electronics and optical communications. In terhertz (THz) research, GaAs and Si have already earned their individual merit. GaAs has found its application as photoconductive antenna and surface emitter. On the other hand, Si which is transparent to THz is commonly used as substrate lens. Due to their individual properties, combining these two materials will therfore present unique material characteristics that we can exploit for THz applications.
Research Objectives
Research Beneficiary(ies) This research will directly benefit the CMPL, upgrade our current THz-TDS setup to be azimutha ready, can be used later on as a reference for the use of GaAs on Si for THz applications.
Research Accoplishments
Total Research Cost
Research Agencies Funding:

UP Diliman

Research Budget Breakdown Year:
Year Funded:
Total Cost
Date Released
Amount Released

Code TS-2014-21
KRA Code Rapid and Sustained Economic Growth
Priority Thrust DOST

Sector Applied Sciences
Actual Sector Materials Science
Related sectors Physics
Entry revision: January 2021